Lateral piezoelectric response across ferroelectric domain walls in thin films

In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180{\deg}domain walls, where the out-of-plane oriented polarization is reversed. Using electric force microscopy measurements we exclude electrostatic effects as the origin of this signal. Moreover, our mechanical simulations of the tip/cantilever system show that the small tilt of the surface at the domain wall below the tip does not satisfactorily explain the observed signal either. We thus attribute this lateral piezoresponse at domain walls to their sideways motion (shear) under the applied electric field. From simple elastic considerations and the conservation of volume of the unit cell, we would expect a similar lateral signal more generally in other ferroelectric materials, and for all types of domain walls in which the out-of-plane component of the polarization is reversed through the domain wall. We show that in BiFeO$_3$ thin films, with 180, 109 and 71{\deg}domain walls, this is indeed the case.Comment: 31 pages, 10 figures. to appear in J. Appl. Phys. Special topic: invited papers from the international symposium on piezoresponse force microscopy and nanoscale phenomena in polar materials. Aveiro - portugal 200

High-Symmetry Polarization Domains in Low-Symmetry Ferroelectrics

We present experimental evidence for hexagonal domain faceting in the ferroelectric polymer PVDF-TrFE films having the lower orthorhombic crystallographic symmetry. This effect can arise from purely electrostatic depolarizing forces. We show that in contrast to magnetic bubble shape domains where such type of deformation instability has a predominantly elliptical character, the emergence of more symmetrical circular harmonics is favored in ferroelectrics with high dielectric constant

Electromechanical Imaging of Biological Systems with Sub-10 nm Resolution

Electromechanical imaging of tooth dentin and enamel has been performed with sub-10 nm resolution using piezoresponse force microscopy. Characteristic piezoelectric domain size and local protein fiber ordering in dentin have been determined. The shape of a single collagen fibril in enamel is visualized in real space and local hysteresis loops are measured. Because of the ubiquitous presence of piezoelectricity in biological systems, this approach is expected to find broad application in high-resolution studies of a wide range of biomaterials.Comment: 12 pages, 4 figures, submitted for publication in Appl. Phys. Let

Choice of tip, signal stability, and practical aspects of piezoresponse-force-microscopy

Piezoresponse force-microscopy (PFM) has become the standard tool to investigate ferroelectrics on the micro- and nanoscale. However, reliability of PFM signals is often problematic and their quantification is challenging and thus not widely applied. Here, we present a study of the reproducibility of PFM signals and of the so-called PFM background signal which has been reported in the literature. We find that PFM signals are generally reproducible to certain extents. The PFM signal difference between 180°domains on periodically poled lithium niobate (PPLN) is taken as the reference signal in a large number of measurements, carried out in a low frequency regime (30-70 kHz). We show that in comparison to Pt coated tips, diamond coated tips exhibit improved signal stability, lower background signal, and less imaging artifacts related to PFM which is reflected in the spread of measurements. This is attributed to the improved mechanical stability of the conductive layer. The average deviation of the mean PFM signal is 38.3%, for a diamond coated tip. Although this deviation is relatively high, it is far better than values from the literature which showed a deviation of approx. 73.1%. Additionally, we find that the average deviation of the background signal from 0 is 11.6% of the PPLN domain contrast. Thus, the background signal needs to be taken into account when quantifying PFM signals and should be subtracted from PFM signals. Those results are important for quantification of PFM signals, since PPLN might be used for this purpose when PFM signals measured on PPLN are related to its macroscopic d33 coefficient. Finally, the crucial influence of sample polishing on PFM signals is shown and we recommend to use a multistep polishing route with a final step involving 200 nm sized colloidal silica particles

Piezoresponse Force Microscopy: A Window into Electromechanical Behavior at the Nanoscale

Piezoresponse force microscopy (PFM) is a powerful method widely used for nanoscale studies of the electromechanical coupling effect in various materials systems. Here, we review recent progress in this field that demonstrates great potential of PFM for the investigation of static and dynamic properties of ferroelectric domains, nanofabrication and lithography, local functional control, and structural imaging in a variety of inorganic and organic materials, including piezoelectrics, semiconductors, polymers, biomolecules, and biological systems. Future pathways for PFM application in high-density data storage, nanofabrication, and spectroscopy are discussed

Shear effects in lateral piezoresponse force microscopy at 180∘^\circ ferroelectric domain walls

In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO$_3$ films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization, and has to be taken into account in order to correctly interpret the ferroelectric domain configuration.Comment: 4 pages, 3 figure

Very large dielectric response of thin ferroelectric films with the dead layers

We study the dielectric response of ferroelectric (FE) thin films with "dead" dielectric layer at the interface with electrodes. The domain structure inevitably forms in the FE film in presence of the dead layer. As a result, the effective dielectric constant of the capacitor $\epsilon_{eff}$ increases abruptly when the dead layer is thin and, consequently, the pattern of 180-degree domains becomes "soft". We compare the exact results for this problem with the description in terms of a popular "capacitor" model, which is shown to give qualitatively incorrect results. We relate the present results to fatigue observed in thin ferroelectric films.Comment: 5 pages, REVTeX 3.1 with one eps-figure. A note added that the linear response is not changed by electromechanical effect. To appear in Phys. Rev.